Tuning the Electrical Parameters of p-NiOx-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation

We utilized laser irradiation as a potential technique in tuning the electrical performance of NiOx/SiO2 thin film transistors (TFTs). By optimizing fluence and number pulses, TFT was evaluated terms mobility, threshold voltage, on/off current ratio subthreshold swing, all which were derived from transfer output characteristics. The 500 pulses-irradiated exhibited an enhanced mobility 3 cm2/V-s value 1.25 for as-deposited TFT, swing 0.65 V/decade, 6.5 × 104 voltage −12.2 V. concentration defect gap states result light absorption processes explains laser-irradiated NiOx. Additionally, results complex thermal photo changes, thus resulting p-type structure.